PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> Ferroelectric Thin Films on Silicon by KrF Excimer Laser Ablation
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<jats:title>Abstract</jats:title><jats:p>The Au / PbZr<jats:sub>x</jats:sub>Ti<jats:sub>1-x</jats:sub>O<jats:sub>3</jats:sub> (PZT) ferroelectrics / YBa<jats:sub>2</jats:sub>Cu<jats:sub>3</jats:sub>O<jats:sub>7-x</jats:sub> (YBCO) superconductor / yttria-stabilized zirconia (YSZ) heterostructures were prepared on Si (100) substrate by KrF excimer laser ablation technique. The x-ray diffraction patterns showed that the PZT films prepared on YBCO / YSZ /Si at 550°C, O<jats:sub>2</jats:sub> 100 mTorr and a laser energy density of 2 J/cm<jats:sup>2</jats:sup>(5Hz) are pure perovskite and highly oriented with the (<jats:italic>00l</jats:italic>) orientation. The polarization (<jats:italic>P</jats:italic>)-electric field (<jats:italic>E</jats:italic>) characteristics showed the remanent polarization <jats:italic>P<jats:sub>r</jats:sub></jats:italic> of 23 µC/cm<jats:sup>2</jats:sup> and coercive field <jats:italic>E</jats:italic><jats:sub>c</jats:sub>, of 35 kV/cm. <jats:italic>P<jats:sub>r</jats:sub></jats:italic> of the PZT capacitor degraded to one half of initial value after about 10<jats:sup>10</jats:sup> switching cycles (50 kHz).</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 604 1999-01-01
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