Effect of Base Impurity Concentration on DC Characteristics of Double Ion Implanted 4H-SiC BJTs
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説明
<jats:title>ABSTRACT</jats:title><jats:p>Double ion implanted 4H-SiC bipolar junction transistors (BJTs) are fabricated by Al and N ion implantation to the base and emitter. The current gain of 3 is obtained at the base Al concentration of 1 × ∼ 10<jats:sup>17</jats:sup> /cm<jats:sup>3</jats:sup>. The collector current as a function of the base Gummel number suggests that double ion implanted 4H-SiC BJT operates in the intrinsic region below the emitter in the low injection level. The high base resistance restricts the base current at V<jats:sub>BE</jats:sub> as low as 3 V.</jats:p>
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- MRS Proceedings
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MRS Proceedings 1069 2008-01-01
Springer Science and Business Media LLC