Development of Nonvolatile Memory using Well-Ordered Ferroelectric Linear Molecules
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説明
<jats:title>ABSTRACT</jats:title><jats:p>Ferroelectric vinylidene fluoride (VDF) molecular films were fabricated by simple vacuum evaporation method, and the ferroelectric properties and its fatigue were investigated. Formation of ferroelectric phase in VDF oligomer with low molecular weight is favored at low substrate temperature around -150°C. The well-ordered VDF oligomer thin films exhibit a lager value of remanent polarization(130mC/m<jats:sup>2</jats:sup>) than that of Poly(VDF). Fatigues of polarization reversal can be performed over 10∧5 cycles. The VDF oligomer films can be one of candidates for disposable nonvolatile memory with unique features such as flexible, wide areas and low cost processing.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 830 2004-01-01
Springer Science and Business Media LLC