Fabrication of high stabilized efficiency a-Si solar cells by using SiH/sub 2/Cl/sub 2/ addition
説明
We have applied SiH/sub 2/Cl/sub 2/ addition together with H/sub 2/ dilution to a-Si:H films and solar cells fabricated by mercury-sensitized photo-CVD. It was observed by SIMS measurements that Cl was incorporated into a-Si:H films over 10/sup 18/ atom/cm/sup 3/, even at the flow rate ratio of 0.01(SiH/sub 2/Cl/sub 2/ to SiH/sub 4/). Furthermore, it was found that excess Cl incorporated in a-Si:H films had been removed by H/sub 2/ dilution. With H/sub 2/ dilution, we could control the excess acceptor states of a-Si:H films grown by SiH/sub 2/Cl/sub 2/ addition and when we applied them to the i-layer of a-Si solar cells, quantum efficiencies increased at all wavelength region and especially at middle wavelength region which is sensible to the electric field weakening of the i-layer by light induced degradation. As a result, we have achieved a high stabilized efficiency of 9.0% for an 1 cm/sup 2/ single-junction a-Si:H solar cell.
収録刊行物
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- Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997
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Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 779-782, 2002-11-22
IEEE
