Reduction of Signal Voltage of DRAM Cell Induced by Discharge of Trapped Charges in Nano-Meter Thick Dual Dielectric Film (SiO2/Si3N4)

詳細情報 詳細情報について

• CRID

  1871428067687037952

• DOI

  10.1109/irps.1990.363518

• ISSN

  07350791

• データソース種別

  • OpenAIRE