GaAs / AlGaAs SQW Optical Switch on Si

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<jats:title>ABSTRACT</jats:title><jats:p>We reported a waveguide-type optical switch fabricated on a Si substrate which utilized the Quantum Confined Stark Effect (QCSE). The prepared sample is an Al<jats:sub>0.3</jats:sub>Ga<jats:sub>0.7</jats:sub>As (cladding layer) / Al<jats:sub>0.25</jats:sub>Ga<jats:sub>0.75</jats:sub>As (guiding layer) double-heterostructure (DH) optical switch with a GaAs single quantum well (SQW) in the guiding layer by MOCVD. The absorption edge of the sample is measured by photocurrent method under reverse bias using a cw Ti: Sapphire laser for a light source. We measured about 10 nm shift of the absorption edge at -8 V from the sample with 8.3 nm SQW. This result demonstrates the Stark-shift effect of GaAs SQW on Si. A 2.5 μm-width ridge was formed by etching in the top cladding layer and the light traveling in the guiding layer was confined to a fundamental mode in vertical (parallel to growth direction) and horizontal direction. This switch showed 33.1 dB/mm modulation at 867 nm wavelength in -8 V bias.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 281 1992-01-01

    Springer Science and Business Media LLC

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