Fabrication of high-performance photodetector based on AlGaN/GaN hetero-field-effect transistors with p-GaN gate

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<jats:title>ABSTRACT</jats:title><jats:p>An AlGaN/GaN photo-hetero-field-effect transistor (photo-HFET) with a p-type GaN gate was fabricated and its properties were compared with those of a HFET without a p-type GaN layer. The photo-HFET with a p-GaN gate exhibited a high signal-to-noise ratio of five orders of magnitude and a dark current density of 10 nA/mm at a drain-source bias of 5 V. In contrast, when the photo-HFET was irradiated with 365 nm (490 μW/cm<jats:sup>2</jats:sup>) UV light, a photocurrent of over 1 mA/mm was achieved. The responsivity of the device was over 1 × 10<jats:sup>5</jats:sup> A/W.</jats:p>

Journal

  • MRS Proceedings

    MRS Proceedings 955 2006-01-01

    Springer Science and Business Media LLC

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