Microscopic gain modeling of semiconductor lasers considering higher-order many-body effects
説明
The authors present a microscopic derivation of the spectral broadening function in semiconductor lasers based upon the nonequilibrium Green's function technique. In this approach, various scattering phenomena such as electron-electron, electron-phonon, and electron-impurity interactions are incorporated in terms of self-energy functions.
収録刊行物
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- 1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)
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1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) 73-76, 2002-11-27
IEEE
