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Operational model for a n-silicon/N-diamond composite electron source
Description
A model for electron field injection from the n-silicon conduction band (CB) into the nitrogen (N)-diamond CB is presented. The model takes into account the electric field penetration into the silicon base and proposes a voltage dependence of the field in vacuum leading to a good fit of the experimental J-V results.
Journal
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- CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389)
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CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) 1 245-248, 2003-01-20
IEEE
