Monte Carlo simulation of current fluctuation at actual contact
説明
Current fluctuation at an actual contact was studied using the Monte Carlo method. The metal/semiconductor interface was treated as the Schottky contact, because the interface inevitably becomes the Schottky contact. Simulations were carried out for n/sup +/n structures to investigate asymmetry of current fluctuation at both contacts. It was found that the current fluctuation at each contact depended on bias, impurity concentration around the contact, length of contact region, and the Schottky barrier height.
収録刊行物
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- 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)
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2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) 233-236, 2002-11-07
IEEE
