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X-ray reflectivity measurement of a iridium coated MEMS optic with atomic layer deposition
Description
We coated a MEMS-based silicon optic with iridium by means of atomic layer deposition. Its X-ray reflectivity is quantitatively measured using a parallel X-ray beam at Al K α 1.49 keV.
Journal
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- 2012 International Conference on Optical MEMS and Nanophotonics
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2012 International Conference on Optical MEMS and Nanophotonics 83-84, 2012-08-01
IEEE
