Effects of hydrogen on the formation of SiGe/Si heterostructures
説明
In this report, we review and discuss our results obtained on the surface segregation of Ge atoms and surfactant effects of hydrogen atoms in Si overlayer growth on Ge/Si(100) by gas-source molecular beam epitaxy (GSMBE) using GeH/sub 4/ and Si/sub 2/H/sub 6/. The layer-by-layer growth rate of the Si overlayers was observed in-situ by reflection high-energy electron diffraction (RHEED) intensity oscillation periods.
収録刊行物
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- Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference
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Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference 210-211, 2003-01-20
Japan Society of Applied Physics