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Higher mobility with high concentration of 2DEG in pseudomorphic In/sub 0.7/Ga/sub 0.3/As/In/sub 0.52/Al/sub 0.48/As quantum-well HEMT structure with [411]A super-flat interfaces grown on [411]A InP substrate by MBE
Description
Recently, we have reported that [411]A super-flat hetero-interfaces (effectively atomically flat interfaces over a wafer-size area) can be realized in GaAs/AlGaAs, InGaAs/AlGaAs and InGaAs/InAlAs heterostructures grown on [411]A-oriented substrates by molecular beam epitaxy (MBE). In this paper, we report a high-quality pseudomorphic In/sub 0.7/Ga/sub 0.3/As/In/sub 0.52/Al/sub 0.48/As quantum-well (QW)-HEMT structure grown on [411]A InP substrates by MBE which shows the highest mobility (39,700 cm/sup 2//Vs at 77 K) of two-dimensional electron gas (2DEG) reported so far for InGaAs/InAlAs HEMT structures with similarly high 2DEG concentration (4.5/spl times/10/sup 12/ cm/sup -2/).
Journal
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- Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)
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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) 24-25, 2003-01-20
IEEE
