Processing and characterization of Si/Ge quantum dots
説明
We have demonstrated high density formation of Si quantum dots with Ge core on thermally-grown SiO 2 with control of highly-selective CVD. Through luminescence measurements, we have reported characteristic carrier confinement and recombination properties in the Ge core. Also, an impact of P delta-doping to the Ge core on the properties were shown.
収録刊行物
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- 2016 IEEE International Electron Devices Meeting (IEDM)
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2016 IEEE International Electron Devices Meeting (IEDM) 33.2.1-33.2.4, 2016-12-01
IEEE