Photoluminescence characterization of interface abruptness of GaAs/ AlGaAs quantum wells grown on [411]A and [100] GaAs substrates

収録刊行物

• 12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

  12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 173-176, 2005-08-25

  IEEE