Observation of direct tunneling conduction for TDTFT in high temperatures
説明
We calculated the tunneling current in the high temperatures and discussed the dominant conduction mechanism of TDTFT. Although the discrepancy between the measured and the calculated data is approximately one order, the increase ratio of I d to absolute temperature is nearly equal for the measured and the calculated one. These data strongly indicate that the dominant mechanism of the I d in the high temperatures for the TDTFT is direct tunneling (DT) from the tail area in the Fermi-Dirac distribution function of Al.
収録刊行物
-
- 2012 IEEE International Meeting for Future of Electron Devices, Kansai
-
2012 IEEE International Meeting for Future of Electron Devices, Kansai 1-2, 2012-05-01
IEEE