Tunneling effects in short period strained AlN/GaN superlattices
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説明
<jats:title>Abstract</jats:title><jats:p>We study electronic conduction of short period strained GaN/AlN superlattices. The mechanisms of current transport perpendicular to the layers were studied, with an emphasis on the elastic and inelastic tunneling through the AlN barriers. Electron transport as a function of temperature is examined in I‐V, G‐V (first derivative dI/dV). The current and the conductance show nonlinear oscillatory character. The observed characteristics are interpreted as sequential resonant tunneling through AlN barriers and reveal negative differential conductivity (NDC). (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>
収録刊行物
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- physica status solidi c
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physica status solidi c 6 2009-05-26
Wiley