Device model for three-terminal lateral p-n junction quantum well lasers
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説明
We present a device model for a lateral p-n junction quantum-well edge-emitting laser-transistor with an extra gate contact. Such a contact provides an opportunity to control the confinement conditions of the electrons injected into the active region and, as a consequence, the threshold current and output optical power by the gate voltage. Using the proposed model, we calculate the laser dc characteristics and estimate its modulation performance. We show that the application of negative gate voltages can lead to a substantial decrease in the threshold current. The estimated cutoff modulation frequency associated with the gate recharging can be much higher than those associated with the photon and electron lifetimes.
収録刊行物
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- SPIE Proceedings
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SPIE Proceedings 4986 132-, 2003-07-23
SPIE