Influence of Layout and Packaging on the Temperature of GaAs Power PHEMTs
説明
The influence of device layout and packaging on transistor temperature was investigated. The operating temperatures of GaAs power PHEMTs were measured with integrated temperature sensors from 20 - 200°C with an accuracy of a few degrees. The measured data are in very good agreement with our three-dimensional simulation results. Thus, reliable prediction on the effect of packaging and layout details on device temperature is possible.
収録刊行物
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- 28th European Microwave Conference, 1998
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28th European Microwave Conference, 1998 439-442, 1998-10-01
IEEE