Growth of High Quality Poly-SiGe on Glass Substrates

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<jats:title>Abstract</jats:title><jats:p>The composition variation and strutural properties of poly-SiGe thin films were investigated by Reactive Thermal CVD with Si<jats:sub>2</jats:sub>H<jats:sub>6</jats:sub> and GeF<jats:sub>4</jats:sub>. Deposition of the films was carried out at a low temperature of 450°C on oxidized silicon substrates using different growth parameters, i.e., the source gas flow ratio (Si<jats:sub>2</jats:sub>H<jats:sub>6</jats:sub>/ GeF<jats:sub>4</jats:sub>) and thegas flow rate. The structural profiles of as-deposited films were characterized by X-ray diffraction (XRD) and Raman scattering spectroscopies, scanning electron microscopy (SEM) and transmission electron microscopy (TEM).</jats:p><jats:p>All these films show (220) preferential orientation. The mole fractions of Si in poly-Si<jats:sub><jats:italic>x</jats:italic></jats:sub>Ge<jats:sub>1−<jats:italic>x</jats:italic></jats:sub> films were estimated to be from 0.95 to 0.05 for x by using Vegard's law for the XRD peaks. TEM observation revealed that high crystallinity was well established even in poly-Si<jats:sub>0.95</jats:sub>Ge<jats:sub>0.05</jats:sub> films owing to the direct nucleation on the substrate surface.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 452 1996-01-01

    Springer Science and Business Media LLC

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