Built-in random testing for dual-port RAMs
説明
In this paper, a random testing method for dual-port RAMs to detect double-coupling faults using a BIST scheme is discussed. A double-coupling fault is possibly caused by accessing two cells simultaneously, and is peculiar to dual-port RAMs. Our test method is based on the consideration of geometric locations in double accessing, and it aims at reducing the overhead of a BIST circuit. >
収録刊行物
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- Proceedings of IEEE International Workshop on Memory Technology, Design, and Test
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Proceedings of IEEE International Workshop on Memory Technology, Design, and Test 2-6, 2002-12-17
IEEE Comput. Soc. Press