Efficient Luminescence from {11.2} InGaN/GaN Quantum Wells

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<jats:title>ABSTRACT</jats:title><jats:p>InGaN/GaN multiple quantum wells (MQWs) with [0001], <11.2>, and <11.0> orientations have been fabricated by means of the re-growth technique on patterned GaN templates with striped geometry, normal planes of which are (0001) and {11.0}, on sapphire (0001) substrates. It was found that photoluminescence intensity of the {11.2} QW is the strongest among the three QWs, and its internal quantum efficiency was estimated to be as large as about 40% at room temperature. The radiative recombination lifetime of the {11.2} QW was about 0.39 ns at 14 K, which was 3.8 times shorter than that of conventional <jats:italic>c</jats:italic>-oriented QWs emitting at a similar wavelength. These findings are well explained by the high internal quantum efficiency in the {11.2} QW owing to the suppression of piezoelectric fields.</jats:p>

Journal

  • MRS Proceedings

    MRS Proceedings 831 2004-01-01

    Springer Science and Business Media LLC

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