Fabrication of SAW device coupled with semiconductor
説明
This paper reports a fabrication of Si/LiNbO/sub 3/ coupled device by using improved film bonding process. In order to prevent a thermal strain of the film due to the different thermal expansion in the film bonding process, we applied local heating processes to obtain the tight bonding force of the interfaces by using a microwave heating process as well as an infrared laser heating process. We can apply the local heating process to the fabrication of SAW-semiconductor coupled device. We fabricated a test device with Si/LiNbO/sub 3/ structure for low cost of mass production. It would be expected to realize the highly functional devices.
収録刊行物
-
- 2000 IEEE Ultrasonics Symposium. Proceedings. An International Symposium (Cat. No.00CH37121)
-
2000 IEEE Ultrasonics Symposium. Proceedings. An International Symposium (Cat. No.00CH37121) 1 357-360, 2002-11-11
IEEE
