<title>Continous phase transitions fabricated by subtractive process</title>
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説明
An unexpected resist pattern due to the phase transition at the shifter edge is one of the problems for applying phase shifting masks. We have developed a novel subtractive process with a wet-etching technique. By using a controlled conventional resist process with some modifications, a gradually sloped shifter edge over 2 micrometers wide was produced when the quartz substrate was etched to 380 nm for a 180 degree(s) phase shift. By this etching process, the quartz covered with the chrome becomes only a 380 nm undercut and this chrome edge was durable during the physical cleaning process. This fabricated mask could easily provide 0.3 micrometers L/S patterns on the wafer with 160 mJ/cm2 on i-line stepper and the unexpected resist patterns totally disappeared at 110 mJ/cm2 and higher doses.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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- SPIE Proceedings
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SPIE Proceedings 2087 390-398, 1994-02-15
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