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Low voltage carrier injection in ZnSe-based blue-green laser diodes on p-type GaAs substrates with InGaAlP band offset reduction layers
Description
Summary form only given. A low voltage current injection is demonstrated theoretically and experimentally for ZnSe/CdZnSe blue-green lasers. Insertion of InGaAlP layers reduce the excess voltage drop, due to the large valence band offset between the p-type GaAs substrate and p-type ZnSe layer. The InGaAlP layers are also useful as high concentration p-type ZnSe layers can be grown on them.
Journal
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- Proceedings of IEEE 14th International Semiconductor Laser Conference
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Proceedings of IEEE 14th International Semiconductor Laser Conference 199-200, 2002-12-17
IEEE
