Planarization of SiO/sub 2/ film employing anhydrous HF vapor
説明
CMP (Chemical mechanical Polishing) is currently used for the planarization of dielectric film in the ULSI multilayer metallization process. However, since CMP requires high loading pressure for a head, the planarization of a low-k porous silica film is not easy due to its fragile characteristic. In this paper, a new planarization method in which a SiO/sub 2/ film is polished softly has been proposed employing an anhydrous HF vapor.
収録刊行物
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- 2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers.
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2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. 238-239, 2003-08-27
Japan Soc. Appl. Phys