New method of surface recombination velocity measurement for power device simulation
説明
A novel method of surface recombination velocity measurement for evaluating high-voltage lateral power devices is presented. This method is based on the combination of experiment and simulation for the time decay of photoluminescence emitted from Si crystals. Good results were obtained for a Si crystal with an SiO/sub 2/ cap. >
収録刊行物
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- [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs
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[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs 154-158, 2002-12-30
IEEE