Hole or Electron Doped C<sub>60</sub>Polymer Using Free Electron Laser Irradiation

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説明

<jats:title>ABSTRACT</jats:title><jats:p>Polymerized C60 crystals were grown using the free electron laser (FEL) irradiation. In order to promote the polymerization degree, hole or electron was doped in the C60 crystals grown by the liquid-liquid interfacial precipitation (LLIP) method to eliminate the degradation by oxidation. The specimen grown with the I2 dissolved butylalcohol (BTA, CH3(CH2)3OH) and the C60 saturation<jats:italic>o</jats:italic>-xylene solution, subsequently pressed at 7GPa, showed only Ag(2)-derived mode at 1456 cm-1 after the FEL irradiation. The specimen belonged to so-called<jats:italic>F</jats:italic>phase, which is not obtained by the typical photo-induced polymerization process. It was noted that the FEL irradiation for polymerization of C60 was quite useful.</jats:p>

収録刊行物

  • MRS Proceedings

    MRS Proceedings 1284 2011-01-01

    Springer Science and Business Media LLC

詳細情報 詳細情報について

  • CRID
    1871709542643222144
  • DOI
    10.1557/opl.2011.642
  • ISSN
    19464274
    02729172
  • データソース種別
    • OpenAIRE

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