Growth and characterization of transition-metal and rare-earth doped III-nitride semiconductors for spintronics

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説明

<jats:title>ABSTRACT</jats:title><jats:p>Transition metal (Cr) and rare-earth (Dd, Dy) doped III-nitride semiconductor bulk layers and superlattice (SL) structures are grown on sapphire (0001) substrates and GaN (0001) templates by plasma-assisted molecular-beam epitaxy. For the GaGdN/GaN and InGaGdN/GaN SL and Si co-doped samples, enhancement of magnetization and magnetic moment are observed, suggesting the carrier-mediated ferromagnetism. Low temperature growth of GaGdN can increase the Gd concentration and magnetization. Results for the Dy-doped GaN as well as the GaCrN/AlN/GaCrN tunnel magneto-resistance (TMR) diodes are also described.</jats:p>

収録刊行物

  • MRS Proceedings

    MRS Proceedings 1290 2011-01-01

    Springer Science and Business Media LLC

詳細情報 詳細情報について

  • CRID
    1871709542650485248
  • DOI
    10.1557/opl.2011.585
  • ISSN
    19464274
    02729172
  • データソース種別
    • OpenAIRE

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