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High voltage lateral MOS thyristor cascode switch on SOI-safe operating area of SOI-Resurf devices
Description
A high voltage lateral MOS thyristor cascode switch on SOI was proposed. It consists of a high voltage MOS thyristor, a low voltage MOSFET and a pn diode. Excellent on-state and switching characteristics were numerically and experimentally obtained. The safe operating area (SOA) of SOI-Resurf devices were discussed.
Journal
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- 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings
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8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings 101-104, 2002-12-23
IEEE
