Statistical simulation of MOSFETs using TCAD: meshing noise problem and selection of factors
説明
The parametric yield strongly depends on statistical process fluctuations. Statistical simulation is thus needed for a robust design of process, device and circuit. This article describes the statistical simulation of MOSFETs using technology CAD (TCAD). We used this approach to solve the so-called meshing noise problem caused by discretization in process/device simulation. Also, we propose a new selection method of the factors for obtaining BSIM3v3 worst-case models based on principal component analysis (PCA).
収録刊行物
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- IWSM. 1998 3rd International Workshop on Statistical Metrology (Cat. No.98EX113)
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IWSM. 1998 3rd International Workshop on Statistical Metrology (Cat. No.98EX113) 10-13, 2002-11-27
IEEE