PMMA direct patterning by synchrotron radiation using SOG mask
説明
We found that Spin-On-Glass (SOG) material acts as positive-type electron beam resist, and 200 nm line pattern was obtained using 100 nm beam diameter electron beam exposure and following buffered HF (BHF) development. Our previous report, (Jpn. J. Appl. Phys., vol.41, p.4304-4306, (2002)), direct etching of SOG by synchrotron radiation (SR) was confirmed, however, etching rate of polymethylmethacrylate (PMMA) was much higher than that of SOG. Therefore, SOG is the candidate material for high aspect ratio and fine pattern mask to organic materials such as PMMA by SR exposure. In this report; etching of PMMA by SR using SOG mask was examined.
収録刊行物
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- 2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers.
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2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. 214-, 2003-08-27
Japan Soc. Appl. Phys