Fabrication of highly stacked quantum dot laser
説明
We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.
収録刊行物
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- Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
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Conference on Lasers and Electro-Optics/International Quantum Electronics Conference JThE19-, 2009-01-01
OSA
