Characterization of III-nitride Based Schottky UV Detectors with Wide Detectable Wavelength Range (360–10 nm) using Synchrotron Radiation
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説明
<jats:title>ABSTRACT</jats:title><jats:p>Characterizations of transparent Schottky barrier GaN and AlGaN UV detectors in the vacuum UV (VUV) and soft X-ray (SX) region using synchrotron radiation are described. In the GaN UV detectors, the responsivity achieved about 0.05 A/W at 95 eV (13 nm). Thus, their device performance is shown between 3.4 and 100 eV (10 and 360 nm). Furthermore, the high responsivity spectra were realized by using AlGaN Schottky UV detectors consisting of Al<jats:sub>0.5</jats:sub>Ga<jats:sub>0.5</jats:sub>N on AlN epitaxial layer.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 798 2003-01-01
Springer Science and Business Media LLC