NGL masks: development status and issue
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説明
Semiconductor lithography candidates toward 2xnm node and beyond include wide variety of options, such as extension of 193i, EUVL, NIL, and ML2. Most of those candidates, except ML2, need critical mask feature to realize effective high volume manufacturing. In this presentation, EUVL mask technology update and future issues will be presented.
収録刊行物
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- SPIE Proceedings
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SPIE Proceedings 7985 798505-, 2011-02-02
SPIE