Electroluminescence and infrared gain in strained GaSb quantum dots in silicon
説明
Compound semiconductor quantum dots (QDs) buried in Si have been developed as a new class of band-gap engineered Si-based QDs. It is demonstrated that the excellent optical properties of GaSb/Si QDs allow gain in the near-infrared.
収録刊行物
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- 2004 10th International Workshop on Computational Electronics (IEEE Cat. No.04EX915)
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2004 10th International Workshop on Computational Electronics (IEEE Cat. No.04EX915) 58-60, 2005-04-12
IEEE