High-efficiency triggered photons using single-cavity mode coupling of single quantum dot emission

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A high efficiency, triggered single photon source with applications to quantum communications is discussed. The sources is formed from an InAs-based quantum dot located in the center of a micropost cavity formed from GaAs, with top and bottom GaAs/AlAs distributive Bragg reflector pairs, and lateral processing. When pumped above band into the semiconductor host, correlation measurements show a reduction in the two-photon probability to 0.14, compared to unity for a Poisson source. The external efficiency of this structure is 0.24.

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