Alpha and Neutron SER of embedded-SRAM and Novel Estimation Method

Description

Alpha and neutron SER's of embedded-SRAM's are evaluated. From the results for several technology generations, SER is expressed as a function of diffusion area and critical charge for devices, but the effect of collection efficiency is constant for the generations. Then, the technology independent SER model named universal curve is introduced. Moreover, SER trend to 45nm generation is quantitatively estimated based on the future trend of device technology.

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