Ka-band monolithic GaAs two-stage power amplifier
説明
The development of a Ka-band monolithic GaAs two-stage power amplifier with 3.6-mm total gate width is presented. The monolithic amplifier uses FETs with 1.2-mm and 2.4-mm gate widths for the first-stage and second-stage devices, respectively. It delivers an output power of 0.56 W, with a power gain of 7.2 dB, and a power-added efficiency of 15% at 28 GHz. Output power of more than 0.5 W is obtained over 27.5-28.5 GHz, with power gain exceeding 5 dB. The authors expect that further improvements in output power will be achieved through drain current optimization and a monolithic parallel combining of amplifiers. >
収録刊行物
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- Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium
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Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium 33-36, 2003-01-13
IEEE