Resonant Excitation Spectroscopy of Light-Emitting Silicon Nanostructures
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<jats:title>Abstract</jats:title><jats:p>We have studied optical properties and electronic structures of zero-dimensional (OD) Si nanocrystals and two-dimensional (2D) Si quantum wells by means of resonant excitation spectroscopy. Resonantly excited luminescence spectra of 0D Si nanocrystals are sensitive to the surface structure. The size dependence of the photoluminescence (PL) properties and resonantly excited PL spectra of SiO<jats:sub>2</jats:sub>-capped Si nanocrystals indicate that excitons are localized at the interface between the c-Si and SiO<jats:sub>2</jats:sub> surface layer. The TO-phonon related structure in resonantly excited luminescence is clearly observed in H-passivated Si nanocrystals. Hpassivated Si nanocrystals show their crystalline nature, while the oxidized Si nanocrystals show their disordered nature. Luminescence properties of Si/SiO<jats:sub>2</jats:sub> nanocrystals are similar to those of Si/SiO<jats:sub>2</jats:sub> quantum wells. The electronic structures and luminescence properties of Si nanostructures are discussed.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 486 1997-01-01
Springer Science and Business Media LLC