Spin-Dependent Optical Processes in II-VI Diluted Magnetic Semiconductor Nanostructures
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説明
<jats:title>ABSTRACT</jats:title><jats:p>Nanostructures of diluted magnetic semiconductors have potential possibility for the spin electronics application due to their large magneto-optical effects and the quantum confinement effects for band electrons. We have fabricated quantum wells and quantum dots by II-VI diluted magnetic semiconductors of Cd<jats:sub>1-x</jats:sub>Mn<jats:sub>x</jats:sub>Te, Zn<jats:sub>1-x</jats:sub>Mn<jats:sub>x</jats:sub>Te and Zn<jats:sub>1-x-y</jats:sub>Cd<jats:sub>y</jats:sub>Mn<jats:sub>x</jats:sub>Se. These nanostructures showed spin injection, spin switching and ultrafast spin relaxation processes derived in the confined nanostructures. Hybrid structures consisting of diluted magnetic semiconductor and Co showed Mn spin polarizations induced by the Co wire shape.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 799 2003-01-01
Springer Science and Business Media LLC
