Magnetostrictive characteristics of Tb-Fe-Si thin films prepared by magnetron sputtering
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説明
Giant magnetostrictive (GM) Tb-Fe-Si films were prepared by magnetron sputtering system. X-ray diffraction pattern showed film samples were in amorphous state. The Tb-Fe-Si film (Tb : Fe : Si = 1 : 2.7 : 0.2) prepared at 373 K showed 30 MPa tensile stresses generated by magnetostriction along in-plane direction. The film sample showed about 4.3 μΩm of electrical resistivity that is about 100 times larger than that of TbFe2 film shown about 5.9 × 10-2 μΩm. The film sample coercivity was 360 Oe. Magnetization of the film sample at 15 kOe of applied magnetic field in parallel direction to the film surface exhibited 81.0 emu/cc. We prepared giant magnetostrictive thin film with higher electrical resistivity than that of TbFe2 thin film.
収録刊行物
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- SPIE Proceedings
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SPIE Proceedings 4934 307-, 2002-11-01
SPIE