A Single-Power-Supply 0.7V 1GHz 45nm SRAM with An Asymmetrical Unit-ß-ratio Memory Cell
説明
A single-power supply 64 kB SRAM is fabricated in a 45 nm bulk CMOS technology. The SRAM operates at 1GHz with a 0.7 V supply using a fine-grained bitline segmentation architecture and with an asymmetrical unit-ratio 6T cell. With the asymmetrical cell, 22% cell area has been saved compared to a conventional symmetrical cell. This bulk SRAM is designed for GHz-class sub-lV operation.
収録刊行物
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- 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers
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2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers 382-622, 2008-02-01
IEEE