A Study on Switching Frequency Limitation of High Voltage Power Converters in Combination of Si-IEGT and SiC-PiN Diode

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In this paper, we present a comparison between 2.5kV silicon carbide (SiC-) PiN diode and commercial 3.3kV silicon (Si-) PiN diode with 3.3kV silicon injection enhancement gate transistor (Si-IEGT) in the inductively loaded chopper circuit. The experimental switching characteristics of SiC-PiN diode are presented under 1200-V DC bias voltage and 40-A cutoff current and compared to commercially available a Si-PiN diode. Experimental results show that the reverse recovery time and Si-IEGT turn-on loss are significantly reduced in the combination of SiC-PiN diode and Si-IEGT. Also, we propose a design concept of Si-IEGT combined with SiC-PiN diode to reduce switching losses and investigate the limitation of switching frequency in the high power converters. The proposed design concept is evaluated based on device simulation. The internal parameters of the Si-IEGT are adjusted to find the minimum value of total devices loss. In the device simulation result, the possible switching frequency by comprehensive total devices loss in the test circuit is discussed.

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