Experimental verification of large current capability of lateral IEGTs on SOI
説明
This paper reports, for the first time, the experimentally obtained electrical characteristics of lateral injection enhanced insulated gate bipolar transistors (LIEGTs) on SOI. It is shown that optimized LIEGTs have twice as large a current capability as LIGBTs and attain the same turn-off characteristics. These results show that LIEGTs are attractive for the output devices of high voltage power ICs.
収録刊行物
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- 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings
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8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings 97-100, 2002-12-23
IEEE