CW lasing of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapour deposition
説明
We report the fabrication and laser characteristics of self-assembled InAs quantum dot lasers on GaAs substrates grown by metalorganic chemical vapor deposition. Continuous-wave lasing at room temperature with low threshold current (6.7 mA) has been achieved at the lasing wavelength of 1.18 /spl mu/m.
収録刊行物
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- CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671)
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CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671) 628-, 2004-06-21
IEEE
