Layer stackings and physical properties of mixed-layer structure phases III: preparation of mixed-layer structure phases of ReXNb1−XSe2 and OsXNb1−XSe2 and some electrical and magnetic properties

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Abstract The binary systems, ReSe 2 –NbSe 2 and OsSe 2 –NbSe 2 , are studied. Mixed-layer structure phases are found in Re X Nb 1− X Se 2 of the composition range, 0.12⩽ X X Nb 1− X Se 2 of the composition range, 0.10⩽ X b -layers and 3R-layers. The WSe 2 -type 2H b phases are found in Re X Nb 1− X Se 2 of the composition range, 0.45⩽ X ⩽0.55, and in Os X Nb 1− X Se 2 of the composition range, 0.33⩽ X ⩽0.35. A novel mixed-layer structure constructed with 1T-layers and 2H b -layers is found in Os X Nb 1− X Se 2 of the composition range, 0.35⩽ X X increases. The behaviors of the paramagnetic moment and the electrical conductivity of those phases offer us a good example of the number of conduction electrons and their effect.

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