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Synthesis of InN by N+ implantation on InP at high temperature
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Description
Abstract Hexagonal phase InN was synthesized by 50 keV nitrogen ion implantation at 400 °C on an (1 0 0) InP single crystal substrate. The implanted samples were characterised using glancing incidence X-ray diffraction (GIXRD) and Raman spectroscopy. At low implantation dose the metallic In is observed to form due to the implantation-induced decomposition of the InP at 400 °C. As the implantation dose is increased complete nitradation takes place resulting in the disappearance of the metallic indium and formation of InN phase.
Journal
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- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 212 521-524, 2003-12-01
Elsevier BV
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Details 詳細情報について
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- CRID
- 1871991018048577024
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- ISSN
- 0168583X
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- Data Source
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- OpenAIRE