Investigation of data transmission characteristicsofpolarisation-controlled 850 nm GaAs-based VCSELsgrown on (311)B substrates
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説明
The data transmission characteristics of polarisation-controlled 850 nm GaAs-based VCSELs grown on (311)B substrates are investigated and compared with those of VCSELs on (100) substrates. Large differences in the dependence of the BER on bias current and the power penalty between polarisation resolved and unresolved systems are observed in VCSELs on (311)B and (100) substrates. The beneficial effect of the polarisation stability of VCSELs on (311)B substrates is clearly demonstrated.
収録刊行物
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- Electronics Letters
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Electronics Letters 35 45-46, 1999-01-07
Institution of Engineering and Technology (IET)