60GHz-Pulse Detector Based on CMOS Nonlinear Amplifier
説明
A low-power over-Gbps wireless pulse communication is realized at the 60GHz band. To detect 60GHz pulses in a receiver, a single-ended MESFET detector or a diode was conventionally used. However, the MESFET detector cannot be integrated on the silicon substrate with the CMOS building blocks of the receiver and a diode is unavailable in general design rules. To overcome this issue, a common-source amplifier, utilizing a square-law relationship between the drain current Id and the gate voltage Vg of an NMOSFET, is proposed as a detector. A nonlinear amplifier (NLA) using a standard 90nm CMOS process is designed and fabricated. It has a voltage responsivity of 1110 mV/mW and power dissipation of 840μW. The results show that, using the proposed NLA, it is possible to design low-cost, over-Gbps, low-power fully CMOS-compatible and compact 60GHz receiver systems.
収録刊行物
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- 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
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2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 1-4, 2009-01-01
IEEE